Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

A New Monolithic Approach for Mid-IR Focal Plane Arrays

Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epitaxy (MBE) and reported to have comparable performance to the devices grown on more expensive InSb and GaSb substrates. We demonstrated that GaAs, in addition to providing a cost saving substrate for antimonide-based semiconductor growth, can be used as a functional material to fabricate transistor...

Testing of a GaAs MESFET Static RAM

This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...

Interaction of Mn with GaAs and InSb

The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or Sb flux, has been studied by reflection high energy electron diffraction, atomic force microscopy and scanning tunnelling microscopy. On both Gaand As-terminated GaAs(0 0 1), (2× n) Mn-induced reconstruction domains arise with n = 2 for the most well ordered reconstructions. On the Ga-terminated (4× 6), th...

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb...

Multispectral mid-infrared light emitting diodes on a GaAs substrate